VUV laser photodesorption of hydrogen from Si(100)(2$\,{{\bf\times}}\,$1): H surface assisted by scanning tunneling microscope

D. Riedel; A.J. Mayne; G. Dujardin

doi:doi:10.1051/jp4:2005127023

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Volume 127 (June 2005)

J. Phys. IV France, 127 (2005) 151-155

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Numéro		J. Phys. IV France Volume 127, June 2005


Page(s)		151 - 155
DOI		https://doi.org/10.1051/jp4:2005127023

J. Phys. IV France 127 (2005) 151-155
DOI: 10.1051/jp4:2005127023

VUV laser photodesorption of hydrogen from Si(100)(2 $\,{{\bf\times}}\,$ 1): H surface assisted by scanning tunneling microscope

D. Riedel, A.J. Mayne and G. Dujardin

Laboratoire de Photophysique Moléculaire, CNRS (UPR 3361), Université Paris-Sud, 91405 Orsay, France

Abstract
We report experiments of VUV laser photodesorption of hydrogen from Si(100) $(2{\times}1)$ :H surfaces assisted by an UHV room temperature scanning tunneling microscope (STM). The variation of isolated dangling bonds created has been measured for several fluences by a statistical analysis of the STM observation as a function of the irradiation dose. Structural surface modifications are discussed as well as the signature of photochemical processes.

VUV laser photodesorption of hydrogen from Si(100)(2 1): H surface assisted by scanning tunneling microscope

VUV laser photodesorption of hydrogen from Si(100)(2 $\,{{\bf\times}}\,$ 1): H surface assisted by scanning tunneling microscope