Laser printing of n- and p-type semiconductors for complex organic thin film transistors

¹ Laboratoire LP3 (Lasers, Plasma et Procédés Photoniques) - UMR 6182 CNRS - Université de la Méditerranée - Campus de Luminy C917, 13288 Marseille Cedex 09, France
² CINaM (Centre Interdisciplinaire de Nanoscience de Marseillle) - UPR3118 - Campus de Luminy C913, 13288 Marseille Cedex 09, France

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Abstract

With the goal to study complex organic thin film transistor (OTFT) architecture, thin films of semiconductors and of metallic materials have been laser printed. The n-type copper hexa deca fluoro phthalocyanine (F₁₆CuPc) and p-type copper phthalocyanine (CuPc) semiconductors have been used to form the active layers. The materials have been successively transferred onto a receiver substrate by laser pulses in the picosecond regime. The latter substrate has formed the gate and the dielectric of the transistor. The three materials have been then combined in a multilayer stack prepared by the successive depositions of the materials by thermal evaporation under vacuum and then laser have been printed in a single step.